Ansas today officially launched its new automotive-grade Schottky diode product, the SR8H200GE-Q. Utilizing the advanced TO-277G package, it targets the high-efficiency power management needs in electric vehicles, on-board charging systems, and new energy fields, providing a core semiconductor solution for high-reliability application scenarios.

With the acceleration of automotive electrification and electronic integration, efficient and stable power devices have become an industry imperative. The SR8H200GE-Q employs optimized Schottky barrier technology, achieving a high-dimensional balance between the typically trade-off characteristics of low VF (forward voltage) and low IR (reverse current). Its high-voltage design of 200V offers robust transient surge resistance, meeting the demands of harsh automotive environments and fully complying with the AEC-Q101 automotive reliability standard.

The new product adopts the TO-277G package. This compact package features excellent thermal performance and is suitable for high-density power module designs, providing a high-power-density solution for applications such as On-Board Chargers (OBC), DC-DC converters, motor drives, and Battery Management Systems (BMS).