Ansas has announced the availability of SiC Schottky Barrier Diodes (SBDs) featuring lower loss and higher voltage capability compared to silicon-based SBDs and 4A,6A,8A,10A 650V SIC SBDs in TO-220AC package have been released recently. The internal insulation technology delivers a significant reduction in power losses, boosts operating frequencies, and increases the power density of the overall solution.
SiC SBDs feature a reverse recovery time (trr), which is much less than the 35nsec to 50nsec of conventional Si-based FRDs. As a result, recovery loss is much less than Si-based FRDs, decreasing heat generation as well. In addition, the products ensure more stable operation during temperature changes than silicon FRDs, contributing to ceramic isulators and heat sinks in devices.
● High frequency operation
● High temperature operation to +175℃
● Extremely low reverse recovery current
● Ceramic insulator and heatsink combined
● Positive temperature coefficient of forward voltage
● Reduces the switching power losses and increases the efficiency of the application.
Power supply PFC circuits for PCs, servers, AC, and other power switching applications.
|Part Number |
|SC04650COI ||650||4 ||9.5 ||1.5||170 ||175|
|SC08650COI ||650 ||8||30||1.35||20||175|
|SC10650COI ||650 ||10 ||35 ||1.4 ||20 ||175|